Did we just made a Schottky diode? Al on n-doped Si. Random Fe contacts to Al and Si to measure. Positive lead to Si, negative to Al. X = V (2V per division) Y = I (100mA per 1V, so 5mA per division.) (the I/V curve is a composite image of two waveforms) Si has its protective oxide layer forcefully removed using abrasive methods (ie. sandpaper [!] - still working on being able to handle HF safely). Not sure if it matters, but the Al is thermally evaporated aluminum foil from EDEKA.